Chin. J. Semicond. > 1988, Volume 9 > Issue 4 > 429-434
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Ge在GaAs液相外延中的行为

杨辉 and 梁骏吾

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    Received: 19 August 2015 Revised: Online: Published: 01 April 1988

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      Article Navigation >  Journal of Semiconductors  > 1988  >  9(4): 429-434
      杨辉, 梁骏吾. Ge在GaAs液相外延中的行为[J]. 半导体学报(英文版), 1988, 9(4): 429-434.
      Citation:
      杨辉, 梁骏吾. Ge在GaAs液相外延中的行为[J]. 半导体学报(英文版), 1988, 9(4): 429-434.
      shu

      • Received Date: 2015-08-19

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