Journal of Semiconductors

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Volume 9, Issue 4, Apr 1988

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CONTENTS

交换关联对半导体超晶格等离激元色散关系的影响

薛登平, 蔡建华

Chin. J. Semicond. 1988, 9(4): 339-342

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1988, 9(4): 339.

薛登平, 蔡建华. 交换关联对半导体超晶格等离激元色散关系的影响[J]. Chin. J. Semicond., 1988, 9(4): 339..Export: BibTex EndNote

薛登平, 蔡建华. 交换关联对半导体超晶格等离激元色散关系的影响[J]. Chin. J. Semicond., 1988, 9(4): 339...

超晶格晶格振动的改进的线性链模型

夏建白

Chin. J. Semicond. 1988, 9(4): 343-351

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1988, 9(4): 343.

夏建白. 超晶格晶格振动的改进的线性链模型[J]. Chin. J. Semicond., 1988, 9(4): 343..Export: BibTex EndNote

夏建白. 超晶格晶格振动的改进的线性链模型[J]. Chin. J. Semicond., 1988, 9(4): 343...

立方半导体光学声子形变势的LMTO计算方法

王仁智, 黄美纯

Chin. J. Semicond. 1988, 9(4): 352-357

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1988, 9(4): 352.

王仁智, 黄美纯. 立方半导体光学声子形变势的LMTO计算方法[J]. Chin. J. Semicond., 1988, 9(4): 352..Export: BibTex EndNote

王仁智, 黄美纯. 立方半导体光学声子形变势的LMTO计算方法[J]. Chin. J. Semicond., 1988, 9(4): 352...

Si(111)表面顶位吸附的双心键理论

钟学富, 邢益荣

Chin. J. Semicond. 1988, 9(4): 358-363

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1988, 9(4): 358.

钟学富, 邢益荣. Si(111)表面顶位吸附的双心键理论[J]. Chin. J. Semicond., 1988, 9(4): 358..Export: BibTex EndNote

钟学富, 邢益荣. Si(111)表面顶位吸附的双心键理论[J]. Chin. J. Semicond., 1988, 9(4): 358...

InGaAsP/InP双异质结激光器中的增益光谱,阈值电流的温度特性及俄歇复合

李玉璋, 岳京兴, 徐俊英, 郑宝贞, 汪孝杰, 庄蔚华

Chin. J. Semicond. 1988, 9(4): 364-372

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1988, 9(4): 364.

李玉璋, 岳京兴, 徐俊英, 郑宝贞, 汪孝杰, 庄蔚华. InGaAsP/InP双异质结激光器中的增益光谱,阈值电流的温度特性及俄歇复合[J]. Chin. J. Semicond., 1988, 9(4): 364..Export: BibTex EndNote

李玉璋, 岳京兴, 徐俊英, 郑宝贞, 汪孝杰, 庄蔚华. InGaAsP/InP双异质结激光器中的增益光谱,阈值电流的温度特性及俄歇复合[J]. Chin. J. Semicond., 1988, 9(4): 364...

蓝紫光范围灵敏的GaAs/Ga_(0.55)Al_(0.45)As异质结光晶体管

黄小康, 孙宝寅, 孙成城, 薛保兴, 张培荣

Chin. J. Semicond. 1988, 9(4): 373-379

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1988, 9(4): 373.

黄小康, 孙宝寅, 孙成城, 薛保兴, 张培荣. 蓝紫光范围灵敏的GaAs/Ga_(0.55)Al_(0.45)As异质结光晶体管[J]. Chin. J. Semicond., 1988, 9(4): 373..Export: BibTex EndNote

黄小康, 孙宝寅, 孙成城, 薛保兴, 张培荣. 蓝紫光范围灵敏的GaAs/Ga_(0.55)Al_(0.45)As异质结光晶体管[J]. Chin. J. Semicond., 1988, 9(4): 373...

n-InSb的磁双光子带间吸收研究

韦韬, 王学忠

Chin. J. Semicond. 1988, 9(4): 380-387

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1988, 9(4): 380.

韦韬, 王学忠. n-InSb的磁双光子带间吸收研究[J]. Chin. J. Semicond., 1988, 9(4): 380..Export: BibTex EndNote

韦韬, 王学忠. n-InSb的磁双光子带间吸收研究[J]. Chin. J. Semicond., 1988, 9(4): 380...

HgCdTe受主能态的非线性吸收光谱

王威礼, 邢启江, 史守旭

Chin. J. Semicond. 1988, 9(4): 388-394

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1988, 9(4): 388.

王威礼, 邢启江, 史守旭. HgCdTe受主能态的非线性吸收光谱[J]. Chin. J. Semicond., 1988, 9(4): 388..Export: BibTex EndNote

王威礼, 邢启江, 史守旭. HgCdTe受主能态的非线性吸收光谱[J]. Chin. J. Semicond., 1988, 9(4): 388...

注砷硅快速热退火过程研究

徐立, 钱佩信, 李志坚

Chin. J. Semicond. 1988, 9(4): 395-402

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1988, 9(4): 395.

徐立, 钱佩信, 李志坚. 注砷硅快速热退火过程研究[J]. Chin. J. Semicond., 1988, 9(4): 395..Export: BibTex EndNote

徐立, 钱佩信, 李志坚. 注砷硅快速热退火过程研究[J]. Chin. J. Semicond., 1988, 9(4): 395...

离子注入GaAs MESFET's的有限元二维数值分析

马秋鸣, 陈敏麟, 罗晋生

Chin. J. Semicond. 1988, 9(4): 403-411

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1988, 9(4): 403.

马秋鸣, 陈敏麟, 罗晋生. 离子注入GaAs MESFET\'s的有限元二维数值分析[J]. Chin. J. Semicond., 1988, 9(4): 403..Export: BibTex EndNote

马秋鸣, 陈敏麟, 罗晋生. 离子注入GaAs MESFET\'s的有限元二维数值分析[J]. Chin. J. Semicond., 1988, 9(4): 403...

氮化后退火——一种提高超薄热氮化SiO_2膜性能的有效方法

吾立峰, 熊大菁, 顾祖毅, 靳东明, 刘理天, 何小寅

Chin. J. Semicond. 1988, 9(4): 412-420

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1988, 9(4): 412.

吾立峰, 熊大菁, 顾祖毅, 靳东明, 刘理天, 何小寅. 氮化后退火——一种提高超薄热氮化SiO_2膜性能的有效方法[J]. Chin. J. Semicond., 1988, 9(4): 412..Export: BibTex EndNote

吾立峰, 熊大菁, 顾祖毅, 靳东明, 刘理天, 何小寅. 氮化后退火——一种提高超薄热氮化SiO_2膜性能的有效方法[J]. Chin. J. Semicond., 1988, 9(4): 412...

WSi_x薄膜及其与GaAs接触的特性

翁觉伟, 忻尚衡, 史常忻, 陈益新

Chin. J. Semicond. 1988, 9(4): 421-428

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1988, 9(4): 421.

翁觉伟, 忻尚衡, 史常忻, 陈益新. WSi_x薄膜及其与GaAs接触的特性[J]. Chin. J. Semicond., 1988, 9(4): 421..Export: BibTex EndNote

翁觉伟, 忻尚衡, 史常忻, 陈益新. WSi_x薄膜及其与GaAs接触的特性[J]. Chin. J. Semicond., 1988, 9(4): 421...

Ge在GaAs液相外延中的行为

杨辉, 梁骏吾

Chin. J. Semicond. 1988, 9(4): 429-434

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1988, 9(4): 429.

杨辉, 梁骏吾. Ge在GaAs液相外延中的行为[J]. Chin. J. Semicond., 1988, 9(4): 429..Export: BibTex EndNote

杨辉, 梁骏吾. Ge在GaAs液相外延中的行为[J]. Chin. J. Semicond., 1988, 9(4): 429...

Si(100)和Si(111)衬底上的同质分子束外延

陈可明, 蒋维栋, 盛篪, 周国良, 张翔九

Chin. J. Semicond. 1988, 9(4): 435-438

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1988, 9(4): 435.

陈可明, 蒋维栋, 盛篪, 周国良, 张翔九. Si(100)和Si(111)衬底上的同质分子束外延[J]. Chin. J. Semicond., 1988, 9(4): 435..Export: BibTex EndNote

陈可明, 蒋维栋, 盛篪, 周国良, 张翔九. Si(100)和Si(111)衬底上的同质分子束外延[J]. Chin. J. Semicond., 1988, 9(4): 435...

横向电压型压力传感器的磁敏性及其消除法

齐薇佳, 鲍敏杭, 于连忠

Chin. J. Semicond. 1988, 9(4): 439-442

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1988, 9(4): 439.

齐薇佳, 鲍敏杭, 于连忠. 横向电压型压力传感器的磁敏性及其消除法[J]. Chin. J. Semicond., 1988, 9(4): 439..Export: BibTex EndNote

齐薇佳, 鲍敏杭, 于连忠. 横向电压型压力传感器的磁敏性及其消除法[J]. Chin. J. Semicond., 1988, 9(4): 439...

碲化镉肖特基势垒的温度依赖关系

张世表, 史尚畬

Chin. J. Semicond. 1988, 9(4): 443-445

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1988, 9(4): 443.

张世表, 史尚畬. 碲化镉肖特基势垒的温度依赖关系[J]. Chin. J. Semicond., 1988, 9(4): 443..Export: BibTex EndNote

张世表, 史尚畬. 碲化镉肖特基势垒的温度依赖关系[J]. Chin. J. Semicond., 1988, 9(4): 443...

影响GaAs-GaAlAs相位调制器的相位移效率因素的研究

邬祥生, A.Alping, T.R.Hausken, L.A.Coldren

Chin. J. Semicond. 1988, 9(4): 446-450

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1988, 9(4): 446.

邬祥生, A.Alping, T.R.Hausken, L.A.Coldren. 影响GaAs-GaAlAs相位调制器的相位移效率因素的研究[J]. Chin. J. Semicond., 1988, 9(4): 446..Export: BibTex EndNote

邬祥生, A.Alping, T.R.Hausken, L.A.Coldren. 影响GaAs-GaAlAs相位调制器的相位移效率因素的研究[J]. Chin. J. Semicond., 1988, 9(4): 446...

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