Chin. J. Semicond. > 2002, Volume 23 > Issue 10 > 1073-1077
|

CONTENTS

掺锗CZSi原生晶体中氧的微沉淀

张维连 , 李嘉席 , 陈洪建 , 孙军生 , 张建新 , 张恩怀 and 赵红生

+ Author Affiliations

PDF

Key words: 掺锗直拉硅, 氧沉淀, 分凝, 晶体缺陷

    • Search

    Advanced Search >>

    GET CITATION

    shu

    Export: BibTex EndNote

    Article Metrics

    Article views: 2838 Times PDF downloads: 1071 Times Cited by: 0 Times

    History

    Received: 19 August 2015 Revised: Online: Published: 01 October 2002

    Catalog

      Email This Article

      User name:
      Email:*请输入正确邮箱
      Code:*验证码错误
      Send
      Article Navigation >  Journal of Semiconductors  > 2002  >  23(10): 1073-1077
      张维连, 李嘉席, 陈洪建, 孙军生, 张建新, 张恩怀, 赵红生. 掺锗CZSi原生晶体中氧的微沉淀[J]. 半导体学报(英文版), 2002, 23(10): 1073-1077.
      Citation:
      张维连, 李嘉席, 陈洪建, 孙军生, 张建新, 张恩怀, 赵红生. 掺锗CZSi原生晶体中氧的微沉淀[J]. 半导体学报(英文版), 2002, 23(10): 1073-1077.
      shu

      • Received Date: 2015-08-19

      Catalog

        Journal of Semiconductors © 2017 All Rights Reserved   京ICP备05085259号-2

        /

        DownLoad:  Full-Size Img  PowerPoint
        Return
        Return