Chin. J. Semicond. > 2002, Volume 23 > Issue 10 > 1073-1077
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掺锗CZSi原生晶体中氧的微沉淀

张维连 , 李嘉席 , 陈洪建 , 孙军生 , 张建新 , 张恩怀 and 赵红生

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Key words: 掺锗直拉硅, 氧沉淀, 分凝, 晶体缺陷

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    Received: 19 August 2015 Revised: Online: Published: 01 October 2002

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      Article Navigation >  Journal of Semiconductors  > 2002  >  23(10): 1073-1077
      张维连, 李嘉席, 陈洪建, 孙军生, 张建新, 张恩怀, 赵红生. 掺锗CZSi原生晶体中氧的微沉淀[J]. 半导体学报(英文版), 2002, 23(10): 1073-1077.
      Citation:
      张维连, 李嘉席, 陈洪建, 孙军生, 张建新, 张恩怀, 赵红生. 掺锗CZSi原生晶体中氧的微沉淀[J]. 半导体学报(英文版), 2002, 23(10): 1073-1077.
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      • Received Date: 2015-08-19

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