Chin. J. Semicond. > 2002, Volume 23 > Issue 2 > 124-130

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热载流子应力下p-MOSFETs在低栅电压范围的统一退化模型(英文)

胡靖 , 穆甫臣 , 许铭真 and 谭长华

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Key words: 热载流子效应, p-MOSFET, 退化模型, 电子流量

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    Received: 19 August 2015 Revised: Online: Published: 01 February 2002

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      胡靖, 穆甫臣, 许铭真, 谭长华. 热载流子应力下p-MOSFETs在低栅电压范围的统一退化模型(英文)[J]. 半导体学报(英文版), 2002, 23(2): 124-130.
      Citation:
      胡靖, 穆甫臣, 许铭真, 谭长华. 热载流子应力下p-MOSFETs在低栅电压范围的统一退化模型(英文)[J]. 半导体学报(英文版), 2002, 23(2): 124-130.

      • Received Date: 2015-08-19

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