Citation: |
胡靖, 穆甫臣, 许铭真, 谭长华. 热载流子应力下p-MOSFETs在低栅电压范围的统一退化模型(英文)[J]. 半导体学报(英文版), 2002, 23(2): 124-130.
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Key words: 热载流子效应, p-MOSFET, 退化模型, 电子流量
Article views: 2015 Times PDF downloads: 801 Times Cited by: 0 Times
Received: 19 August 2015 Revised: Online: Published: 01 February 2002
Citation: |
胡靖, 穆甫臣, 许铭真, 谭长华. 热载流子应力下p-MOSFETs在低栅电压范围的统一退化模型(英文)[J]. 半导体学报(英文版), 2002, 23(2): 124-130.
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