Chin. J. Semicond. > 2007, Volume 28 > Issue 9 > 1392-1395
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Theoretical Calculation of Conversion Efficiency of InGaN Solar Cells

Wen Bo, Zhou Jianjun, Jiang Ruolian, Xie Zili, Chen Dunjun, Ji Xiaoli, Han Ping, Zhang Rong and Zheng Youdou

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Abstract: Based on the current-voltage equation for pn junction solar cells,the conversion efficiency under ideal conditions for an InGaN solar cell was calculated.The conversion efficiencies of one-junction,two-junction,and three-junction InxGa1-xN solar cells were calculated to 27.3%,36.6%,and 41.3%,respectively,all of which are higher than those of common materials.The optimal band gaps and the indium contents of these InxGa1-xN solar cells were also obtained,giving a theoretical basis for the design of InxGa1-xN solar cells.

Key words: InGaN, solar cell, conversion efficiency, theoretical calculation

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    Received: 18 August 2015 Revised: 04 April 2007 Online: Published: 01 September 2007

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      Article Navigation >  Journal of Semiconductors  > 2007  >  28(9): 1392-1395
      Wen Bo, Zhou Jianjun, Jiang Ruolian, Xie Zili, Chen Dunjun, Ji Xiaoli, Han Ping, Zhang Rong, Zheng Youdou. Theoretical Calculation of Conversion Efficiency of InGaN Solar Cells[J]. Journal of Semiconductors, 2007, 28(9): 1392-1395. ****Wen B, Zhou J J, Jiang R L, Xie Z L, Chen D J, Ji X L, Han P, Zhang R, Zheng Y D. Theoretical Calculation of Conversion Efficiency of InGaN Solar Cells[J]. Chin. J. Semicond., 2007, 28(9): 1392.
      Citation:
      Wen Bo, Zhou Jianjun, Jiang Ruolian, Xie Zili, Chen Dunjun, Ji Xiaoli, Han Ping, Zhang Rong, Zheng Youdou. Theoretical Calculation of Conversion Efficiency of InGaN Solar Cells[J]. Journal of Semiconductors, 2007, 28(9): 1392-1395. ****
      Wen B, Zhou J J, Jiang R L, Xie Z L, Chen D J, Ji X L, Han P, Zhang R, Zheng Y D. Theoretical Calculation of Conversion Efficiency of InGaN Solar Cells[J]. Chin. J. Semicond., 2007, 28(9): 1392.
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      Theoretical Calculation of Conversion Efficiency of InGaN Solar Cells

      • Key Laboratory of Advanced Photonic and Electronic Materials of Jiangsu,Department of Physics,Nanjing University,Nanjing 210093,China

      • Key Laboratory of Advanced Photonic and Electronic Materials of Jiangsu,Department of Physics,Nanjing University,Nanjing 210093,China

      • Key Laboratory of Advanced Photonic and Electronic Materials of Jiangsu,Department of Physics,Nanjing University,Nanjing 210093,China

      • Key Laboratory of Advanced Photonic and Electronic Materials of Jiangsu,Department of Physics,Nanjing University,Nanjing 210093,China

      • Key Laboratory of Advanced Photonic and Electronic Materials of Jiangsu,Department of Physics,Nanjing University,Nanjing 210093,China

      • Key Laboratory of Advanced Photonic and Electronic Materials of Jiangsu,Department of Physics,Nanjing University,Nanjing 210093,China

      • Key Laboratory of Advanced Photonic and Electronic Materials of Jiangsu,Department of Physics,Nanjing University,Nanjing 210093,China

      • Key Laboratory of Advanced Photonic and Electronic Materials of Jiangsu,Department of Physics,Nanjing University,Nanjing 210093,China

      • Key Laboratory of Advanced Photonic and Electronic Materials of Jiangsu,Department of Physics,Nanjing University,Nanjing 210093,China

      • Received Date: 2015-08-18
      • Accepted Date: 2007-02-04
      • Revised Date: 2007-04-04
      • Published Date: 2007-08-31

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