Citation: |
Xia Yan, Wang Junzhuan, Shi Zhuoqiong, Shi Yi, Pu Lin, Zhang Rong, Zheng Youdou, Tao Zhensheng, Lu Fang. Photoluminescence Properties of Er-Doped HfO2 Films[J]. Journal of Semiconductors, 2007, 28(9): 1388-1391.
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Xia Y, Wang J Z, Shi Z Q, Shi Y, Pu L, Zhang R, Zheng Y D, Tao Z S, Lu F. Photoluminescence Properties of Er-Doped HfO2 Films[J]. Chin. J. Semicond., 2007, 28(9): 1388.
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Photoluminescence Properties of Er-Doped HfO2 Films
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Abstract
Er-doped HfO2 films were grown by pulsed laser deposition (PLD) and ion implantation.The room-temperature and varied-temperature PL spectra were observed.By analyzing the PL peak intensity of Er3+ at 1535nm as a function of annealing temperature,we found that annealing at 800℃ can reduce the nonradiative decay channels in HfO2 films such as implantation-induced defects and optically activate Er ions at best,causing the strongest photoluminescence.The PL excitation spectrum of Er3+ in HfO2 film at room temperature shows that there is also indirect excitation besides the direct excitation during the light-emitting process of Er3+.HfO2 films will be a good host material for Er implantation.-
Keywords:
- HfO2,
- Er,
- photoluminescence
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References
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Proportional views