Chin. J. Semicond. > 2007, Volume 28 > Issue 9 > 1388-1391
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Photoluminescence Properties of Er-Doped HfO2 Films

Xia Yan, Wang Junzhuan, Shi Zhuoqiong, Shi Yi, Pu Lin, Zhang Rong, Zheng Youdou, Tao Zhensheng and Lu Fang

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Abstract: Er-doped HfO2 films were grown by pulsed laser deposition (PLD) and ion implantation.The room-temperature and varied-temperature PL spectra were observed.By analyzing the PL peak intensity of Er3+ at 1535nm as a function of annealing temperature,we found that annealing at 800℃ can reduce the nonradiative decay channels in HfO2 films such as implantation-induced defects and optically activate Er ions at best,causing the strongest photoluminescence.The PL excitation spectrum of Er3+ in HfO2 film at room temperature shows that there is also indirect excitation besides the direct excitation during the light-emitting process of Er3+.HfO2 films will be a good host material for Er implantation.

Key words: HfO2, Er, photoluminescence

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    Received: 18 August 2015 Revised: 03 April 2007 Online: Published: 01 September 2007

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      Article Navigation >  Journal of Semiconductors  > 2007  >  28(9): 1388-1391
      Xia Yan, Wang Junzhuan, Shi Zhuoqiong, Shi Yi, Pu Lin, Zhang Rong, Zheng Youdou, Tao Zhensheng, Lu Fang. Photoluminescence Properties of Er-Doped HfO2 Films[J]. Journal of Semiconductors, 2007, 28(9): 1388-1391. ****Xia Y, Wang J Z, Shi Z Q, Shi Y, Pu L, Zhang R, Zheng Y D, Tao Z S, Lu F. Photoluminescence Properties of Er-Doped HfO2 Films[J]. Chin. J. Semicond., 2007, 28(9): 1388.
      Citation:
      Xia Yan, Wang Junzhuan, Shi Zhuoqiong, Shi Yi, Pu Lin, Zhang Rong, Zheng Youdou, Tao Zhensheng, Lu Fang. Photoluminescence Properties of Er-Doped HfO2 Films[J]. Journal of Semiconductors, 2007, 28(9): 1388-1391. ****
      Xia Y, Wang J Z, Shi Z Q, Shi Y, Pu L, Zhang R, Zheng Y D, Tao Z S, Lu F. Photoluminescence Properties of Er-Doped HfO2 Films[J]. Chin. J. Semicond., 2007, 28(9): 1388.
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      Photoluminescence Properties of Er-Doped HfO2 Films

      • Jiangsu Provincial Key Laboratory of Photonic and Electronic Material Science and Technology,Department of Physics,Nanjing University,Nanjing 210093,China

      • Jiangsu Provincial Key Laboratory of Photonic and Electronic Material Science and Technology,Department of Physics,Nanjing University,Nanjing 210093,China

      • Jiangsu Provincial Key Laboratory of Photonic and Electronic Material Science and Technology,Department of Physics,Nanjing University,Nanjing 210093,China

      • Jiangsu Provincial Key Laboratory of Photonic and Electronic Material Science and Technology,Department of Physics,Nanjing University,Nanjing 210093,China

      • Jiangsu Provincial Key Laboratory of Photonic and Electronic Material Science and Technology,Department of Physics,Nanjing University,Nanjing 210093,China

      • Jiangsu Provincial Key Laboratory of Photonic and Electronic Material Science and Technology,Department of Physics,Nanjing University,Nanjing 210093,China

      • Jiangsu Provincial Key Laboratory of Photonic and Electronic Material Science and Technology,Department of Physics,Nanjing University,Nanjing 210093,China

      • Jiangsu Provincial Key Laboratory of Photonic and Electronic Material Science and Technology,Department of Physics,Nanjing University,Nanjing 210093,China

      • Department of Physics,Fudan University,Shanghai 200433,China

      • Received Date: 2015-08-18
      • Accepted Date: 2007-03-03
      • Revised Date: 2007-04-03
      • Published Date: 2007-08-31

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