Chin. J. Semicond. > 2000, Volume 21 > Issue 10 > 999-1004
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利用FN振荡电流测量超薄栅MOS结构的栅氧化层厚度

毛凌锋 , 谭长华 , 许铭真 and 卫建林

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Key words: 隧穿, 金属氧化物半导体结构, 干涉

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    Received: 20 August 2015 Revised: Online: Published: 01 October 2000

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      Article Navigation >  Journal of Semiconductors  > 2000  >  21(10): 999-1004
      毛凌锋, 谭长华, 许铭真, 卫建林. 利用FN振荡电流测量超薄栅MOS结构的栅氧化层厚度[J]. 半导体学报(英文版), 2000, 21(10): 999-1004.
      Citation:
      毛凌锋, 谭长华, 许铭真, 卫建林. 利用FN振荡电流测量超薄栅MOS结构的栅氧化层厚度[J]. 半导体学报(英文版), 2000, 21(10): 999-1004.
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      • Received Date: 2015-08-20

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