Journal of Semiconductors

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Volume 21, Issue 10, Oct 2000

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CONTENTS

Impactof Device Architecture on Performance and Reliability of Deep Submicron SOI MOSFETs( invited paper)

F.Balestra

Chin. J. Semicond. 2000, 21(10): 937-954

Abstract PDF Cited by ()

F.Balestra. null[J]. Chin. Journal of Semiconductors, 2000, 21(10): 937.

F.Balestra. Impactof Device Architecture on Performance and Reliability of Deep Submicron SOI MOSFETs( invited paper)[J]. Chin. J. Semicond., 2000, 21(10): 937..Export: BibTex EndNote

F.Balestra. Impactof Device Architecture on Performance and Reliability of Deep Submicron SOI MOSFETs( invited paper)[J]. Chin. J. Semicond., 2000, 21(10): 937...

Analytical Charge Voltage Model in MOS InversionLayer Based on Space Charge Capacitance

马玉涛, 刘理天, 李志坚

Chin. J. Semicond. 2000, 21(10): 955-961

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 2000, 21(10): 955.

马玉涛, 刘理天, 李志坚. Analytical Charge Voltage Model in MOS InversionLayer Based on Space Charge Capacitance[J]. Chin. J. Semicond., 2000, 21(10): 955..Export: BibTex EndNote

马玉涛, 刘理天, 李志坚. Analytical Charge Voltage Model in MOS InversionLayer Based on Space Charge Capacitance[J]. Chin. J. Semicond., 2000, 21(10): 955...

Annealing Behavior of Si_(1-x)Ge_x/Si Heterostructures

于卓, 李代宗, 成步文, 李成, 雷震霖, 黄昌俊, 张春辉, 余金中, 王启明, 梁骏吾

Chin. J. Semicond. 2000, 21(10): 962-965

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 2000, 21(10): 962.

于卓, 李代宗, 成步文, 李成, 雷震霖, 黄昌俊, 张春辉, 余金中, 王启明, 梁骏吾. Annealing Behavior of Si_(1-x)Ge_x/Si Heterostructures[J]. Chin. J. Semicond., 2000, 21(10): 962..Export: BibTex EndNote

于卓, 李代宗, 成步文, 李成, 雷震霖, 黄昌俊, 张春辉, 余金中, 王启明, 梁骏吾. Annealing Behavior of Si_(1-x)Ge_x/Si Heterostructures[J]. Chin. J. Semicond., 2000, 21(10): 962...

Compact and Economical MMI Optical Power Splitter for Optical Communication

马慧莲, 杨建义, 江晓清, 王明华

Chin. J. Semicond. 2000, 21(10): 966-969

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 2000, 21(10): 966.

马慧莲, 杨建义, 江晓清, 王明华. Compact and Economical MMI Optical Power Splitter for Optical Communication[J]. Chin. J. Semicond., 2000, 21(10): 966..Export: BibTex EndNote

马慧莲, 杨建义, 江晓清, 王明华. Compact and Economical MMI Optical Power Splitter for Optical Communication[J]. Chin. J. Semicond., 2000, 21(10): 966...

Development of Microwave SiGe Heterojunction Bipolar Transistors

贾宏勇, 朱文斌, 刘志农, 陈培毅, 钱佩信

Chin. J. Semicond. 2000, 21(10): 970-973

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 2000, 21(10): 970.

贾宏勇, 朱文斌, 刘志农, 陈培毅, 钱佩信. Development of Microwave SiGe Heterojunction Bipolar Transistors[J]. Chin. J. Semicond., 2000, 21(10): 970..Export: BibTex EndNote

贾宏勇, 朱文斌, 刘志农, 陈培毅, 钱佩信. Development of Microwave SiGe Heterojunction Bipolar Transistors[J]. Chin. J. Semicond., 2000, 21(10): 970...

Effects of Rapid Thermal Annealing on OpticalProperties of GaInNAs/GaAs Single Quantum Well Grown by Plasma- Assisted Molecular Beam Epitaxy

张伟, 潘钟, 李联合, 王学宇, 林耀望

Chin. J. Semicond. 2000, 21(10): 974-978

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 2000, 21(10): 974.

张伟, 潘钟, 李联合, 王学宇, 林耀望. Effects of Rapid Thermal Annealing on OpticalProperties of GaInNAs/GaAs Single Quantum Well Grown by Plasma- Assisted Molecular Beam Epitaxy[J]. Chin. J. Semicond., 2000, 21(10): 974..Export: BibTex EndNote

张伟, 潘钟, 李联合, 王学宇, 林耀望. Effects of Rapid Thermal Annealing on OpticalProperties of GaInNAs/GaAs Single Quantum Well Grown by Plasma- Assisted Molecular Beam Epitaxy[J]. Chin. J. Semicond., 2000, 21(10): 974...

双层多孔硅结构上的UHV/CVD硅外延

王瑾, 黄靖云, 黄宜平, 李爱珍, 包宗明, 竺士炀, 叶志镇

Chin. J. Semicond. 2000, 21(10): 979-983

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 2000, 21(10): 979.

王瑾, 黄靖云, 黄宜平, 李爱珍, 包宗明, 竺士炀, 叶志镇. 双层多孔硅结构上的UHV/CVD硅外延[J]. Chin. J. Semicond., 2000, 21(10): 979..Export: BibTex EndNote

王瑾, 黄靖云, 黄宜平, 李爱珍, 包宗明, 竺士炀, 叶志镇. 双层多孔硅结构上的UHV/CVD硅外延[J]. Chin. J. Semicond., 2000, 21(10): 979...

量子阱DBR微腔激光器中自发发射的控制

赵红东, 张以谟, 张存善, 周革, 沈光地

Chin. J. Semicond. 2000, 21(10): 984-987

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 2000, 21(10): 984.

赵红东, 张以谟, 张存善, 周革, 沈光地. 量子阱DBR微腔激光器中自发发射的控制[J]. Chin. J. Semicond., 2000, 21(10): 984..Export: BibTex EndNote

赵红东, 张以谟, 张存善, 周革, 沈光地. 量子阱DBR微腔激光器中自发发射的控制[J]. Chin. J. Semicond., 2000, 21(10): 984...

掺铒a-Si∶H,O薄膜1.54μm光致发光和微结构

陈维德, 梁建军, 王永谦

Chin. J. Semicond. 2000, 21(10): 988-992

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 2000, 21(10): 988.

陈维德, 梁建军, 王永谦. 掺铒a-Si∶H,O薄膜1.54μm光致发光和微结构[J]. Chin. J. Semicond., 2000, 21(10): 988..Export: BibTex EndNote

陈维德, 梁建军, 王永谦. 掺铒a-Si∶H,O薄膜1.54μm光致发光和微结构[J]. Chin. J. Semicond., 2000, 21(10): 988...

SIMOX薄膜材料的红外光谱特性和薄膜厚度的非破坏性测量方法

卢殿通, P L F Hemment

Chin. J. Semicond. 2000, 21(10): 993-998

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 2000, 21(10): 993.

卢殿通, P L F Hemment. SIMOX薄膜材料的红外光谱特性和薄膜厚度的非破坏性测量方法[J]. Chin. J. Semicond., 2000, 21(10): 993..Export: BibTex EndNote

卢殿通, P L F Hemment. SIMOX薄膜材料的红外光谱特性和薄膜厚度的非破坏性测量方法[J]. Chin. J. Semicond., 2000, 21(10): 993...

利用FN振荡电流测量超薄栅MOS结构的栅氧化层厚度

毛凌锋, 谭长华, 许铭真, 卫建林

Chin. J. Semicond. 2000, 21(10): 999-1004

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 2000, 21(10): 999.

毛凌锋, 谭长华, 许铭真, 卫建林. 利用FN振荡电流测量超薄栅MOS结构的栅氧化层厚度[J]. Chin. J. Semicond., 2000, 21(10): 999..Export: BibTex EndNote

毛凌锋, 谭长华, 许铭真, 卫建林. 利用FN振荡电流测量超薄栅MOS结构的栅氧化层厚度[J]. Chin. J. Semicond., 2000, 21(10): 999...

高压功率集成电路的混合模拟

张旻, 李肇基, 杨之廉

Chin. J. Semicond. 2000, 21(10): 1005-1009

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 2000, 21(10): 1005.

张旻, 李肇基, 杨之廉. 高压功率集成电路的混合模拟[J]. Chin. J. Semicond., 2000, 21(10): 1005..Export: BibTex EndNote

张旻, 李肇基, 杨之廉. 高压功率集成电路的混合模拟[J]. Chin. J. Semicond., 2000, 21(10): 1005...

GaAs单片集成激光器驱动电路在片测量

孙伟, 田小建, 孙建国, 衣茂斌, 张慕义, 张玉清, 马振昌

Chin. J. Semicond. 2000, 21(10): 1010-1013

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 2000, 21(10): 1010.

孙伟, 田小建, 孙建国, 衣茂斌, 张慕义, 张玉清, 马振昌. GaAs单片集成激光器驱动电路在片测量[J]. Chin. J. Semicond., 2000, 21(10): 1010..Export: BibTex EndNote

孙伟, 田小建, 孙建国, 衣茂斌, 张慕义, 张玉清, 马振昌. GaAs单片集成激光器驱动电路在片测量[J]. Chin. J. Semicond., 2000, 21(10): 1010...

半导体放电管多元胞结构模型

王惠刚, 余岳辉, 刘凤美, 彭昭廉, 黄秋芝

Chin. J. Semicond. 2000, 21(10): 1014-1018

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 2000, 21(10): 1014.

王惠刚, 余岳辉, 刘凤美, 彭昭廉, 黄秋芝. 半导体放电管多元胞结构模型[J]. Chin. J. Semicond., 2000, 21(10): 1014..Export: BibTex EndNote

王惠刚, 余岳辉, 刘凤美, 彭昭廉, 黄秋芝. 半导体放电管多元胞结构模型[J]. Chin. J. Semicond., 2000, 21(10): 1014...

ECR等离子体对单晶硅的低温大面积表面处理

孙剑, 吴嘉达, 钟晓霞, 来冰, 丁训民, 李富铭

Chin. J. Semicond. 2000, 21(10): 1019-1023

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 2000, 21(10): 1019.

孙剑, 吴嘉达, 钟晓霞, 来冰, 丁训民, 李富铭. ECR等离子体对单晶硅的低温大面积表面处理[J]. Chin. J. Semicond., 2000, 21(10): 1019..Export: BibTex EndNote

孙剑, 吴嘉达, 钟晓霞, 来冰, 丁训民, 李富铭. ECR等离子体对单晶硅的低温大面积表面处理[J]. Chin. J. Semicond., 2000, 21(10): 1019...

离子注入降低PtSi肖特基二极管的势垒高度

刘爽, 宁永功, 杨忠孝, 陈艾, 熊平, 杨家德

Chin. J. Semicond. 2000, 21(10): 1024-1027

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 2000, 21(10): 1024.

刘爽, 宁永功, 杨忠孝, 陈艾, 熊平, 杨家德. 离子注入降低PtSi肖特基二极管的势垒高度[J]. Chin. J. Semicond., 2000, 21(10): 1024..Export: BibTex EndNote

刘爽, 宁永功, 杨忠孝, 陈艾, 熊平, 杨家德. 离子注入降低PtSi肖特基二极管的势垒高度[J]. Chin. J. Semicond., 2000, 21(10): 1024...

用ΔV_(be)法对双极晶体管结温不均匀性的测量

杨志伟, 苗庆海, 张德骏, 张兴华, 杨列勇

Chin. J. Semicond. 2000, 21(10): 1028-1031

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 2000, 21(10): 1028.

杨志伟, 苗庆海, 张德骏, 张兴华, 杨列勇. 用ΔV_(be)法对双极晶体管结温不均匀性的测量[J]. Chin. J. Semicond., 2000, 21(10): 1028..Export: BibTex EndNote

杨志伟, 苗庆海, 张德骏, 张兴华, 杨列勇. 用ΔV_(be)法对双极晶体管结温不均匀性的测量[J]. Chin. J. Semicond., 2000, 21(10): 1028...

一种规整高速的费马数模乘的VLSI结构

周浩华, 李志勇, 谢文录, 章倩苓

Chin. J. Semicond. 2000, 21(10): 1032-1037

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 2000, 21(10): 1032.

周浩华, 李志勇, 谢文录, 章倩苓. 一种规整高速的费马数模乘的VLSI结构[J]. Chin. J. Semicond., 2000, 21(10): 1032..Export: BibTex EndNote

周浩华, 李志勇, 谢文录, 章倩苓. 一种规整高速的费马数模乘的VLSI结构[J]. Chin. J. Semicond., 2000, 21(10): 1032...

应变补偿InGaAs/InAlAs量子级联激光器

刘峰奇, 张永照, 张权生, 王占国

Chin. J. Semicond. 2000, 21(10): 1038-1040

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 2000, 21(10): 1038.

刘峰奇, 张永照, 张权生, 王占国. 应变补偿InGaAs/InAlAs量子级联激光器[J]. Chin. J. Semicond., 2000, 21(10): 1038..Export: BibTex EndNote

刘峰奇, 张永照, 张权生, 王占国. 应变补偿InGaAs/InAlAs量子级联激光器[J]. Chin. J. Semicond., 2000, 21(10): 1038...

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