Chin. J. Semicond. > 2000, Volume 21 > Issue 10 > 962-965
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Annealing Behavior of Si_(1-x)Ge_x/Si Heterostructures

于卓 , 李代宗 , 成步文 , 李成 , 雷震霖 , 黄昌俊 , 张春辉 , 余金中 , 王启明 and 梁骏吾

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Key words: 异质结

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    Received: 20 August 2015 Revised: Online: Published: 01 October 2000

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      Article Navigation >  Journal of Semiconductors  > 2000  >  21(10): 962-965
      于卓, 李代宗, 成步文, 李成, 雷震霖, 黄昌俊, 张春辉, 余金中, 王启明, 梁骏吾. Annealing Behavior of Si_(1-x)Ge_x/Si Heterostructures[J]. 半导体学报(英文版), 2000, 21(10): 962-965.
      Citation:
      于卓, 李代宗, 成步文, 李成, 雷震霖, 黄昌俊, 张春辉, 余金中, 王启明, 梁骏吾. Annealing Behavior of Si_(1-x)Ge_x/Si Heterostructures[J]. 半导体学报(英文版), 2000, 21(10): 962-965.
      shu

      • Received Date: 2015-08-20

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