Chin. J. Semicond. > 2000, Volume 21 > Issue 10 > 1024-1027
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离子注入降低PtSi肖特基二极管的势垒高度

刘爽 , 宁永功 , 杨忠孝 , 陈艾 , 熊平 and 杨家德

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Key words: PtSi, 肖特基二极管, 势垒高度, 离子注入

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    Received: 20 August 2015 Revised: Online: Published: 01 October 2000

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      Article Navigation >  Journal of Semiconductors  > 2000  >  21(10): 1024-1027
      刘爽, 宁永功, 杨忠孝, 陈艾, 熊平, 杨家德. 离子注入降低PtSi肖特基二极管的势垒高度[J]. 半导体学报(英文版), 2000, 21(10): 1024-1027.
      Citation:
      刘爽, 宁永功, 杨忠孝, 陈艾, 熊平, 杨家德. 离子注入降低PtSi肖特基二极管的势垒高度[J]. 半导体学报(英文版), 2000, 21(10): 1024-1027.
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      • Received Date: 2015-08-20

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