Chin. J. Semicond. > 2000, Volume 21 > Issue 10 > 955-961
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Analytical Charge Voltage Model in MOS InversionLayer Based on Space Charge Capacitance

马玉涛 , 刘理天 and 李志坚

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    Received: 20 August 2015 Revised: Online: Published: 01 October 2000

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      Article Navigation >  Journal of Semiconductors  > 2000  >  21(10): 955-961
      马玉涛, 刘理天, 李志坚. Analytical Charge Voltage Model in MOS InversionLayer Based on Space Charge Capacitance[J]. 半导体学报(英文版), 2000, 21(10): 955-961.
      Citation:
      马玉涛, 刘理天, 李志坚. Analytical Charge Voltage Model in MOS InversionLayer Based on Space Charge Capacitance[J]. 半导体学报(英文版), 2000, 21(10): 955-961.
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      • Received Date: 2015-08-20

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