Chin. J. Semicond. > 1981, Volume 2 > Issue 4 > 267-272
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用X射线形貌技术研究GaAs衬底及GaAs-Al_xGa_(1-x)As DH外延片中的缺陷

高维滨 , 石志文 , 任庆余 and 鞠静丽

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    高维滨, 石志文, 任庆余, 鞠静丽. 用X射线形貌技术研究GaAs衬底及GaAs-Al_xGa_(1-x)As DH外延片中的缺陷[J]. 半导体学报(英文版), 1981, 2(4): 267-272.
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    Received: 20 August 2015 Revised: Online: Published: 01 April 1981

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      Article Navigation >  Journal of Semiconductors  > 1981  >  2(4): 267-272
      高维滨, 石志文, 任庆余, 鞠静丽. 用X射线形貌技术研究GaAs衬底及GaAs-Al_xGa_(1-x)As DH外延片中的缺陷[J]. 半导体学报(英文版), 1981, 2(4): 267-272.
      Citation:
      高维滨, 石志文, 任庆余, 鞠静丽. 用X射线形貌技术研究GaAs衬底及GaAs-Al_xGa_(1-x)As DH外延片中的缺陷[J]. 半导体学报(英文版), 1981, 2(4): 267-272.
      shu

      • Received Date: 2015-08-20

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