Chin. J. Semicond. > 1981, Volume 2 > Issue 4 > 263-266
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用场效应方法研究a-Si中定域态密度

杨喜荣 , 廖显伯 , 孔光临 and 刘昌灵

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    Received: 20 August 2015 Revised: Online: Published: 01 April 1981

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      Article Navigation >  Journal of Semiconductors  > 1981  >  2(4): 263-266
      杨喜荣, 廖显伯, 孔光临, 刘昌灵. 用场效应方法研究a-Si中定域态密度[J]. 半导体学报(英文版), 1981, 2(4): 263-266.
      Citation:
      杨喜荣, 廖显伯, 孔光临, 刘昌灵. 用场效应方法研究a-Si中定域态密度[J]. 半导体学报(英文版), 1981, 2(4): 263-266.
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      • Received Date: 2015-08-20

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