| Citation: |
Zhao Lingli, Duan Xiaojin, Yin Minghui, Xu Xiangyu, Wang Shouguo. Etching Si Wafer Using Atmospheric Pressure RF Cold Plasma Jet[J]. Journal of Semiconductors, 2007, 28(10): 1615-1619.
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Zhao L L, Duan X J, Yin M H, Xu X Y, Wang S G. Etching Si Wafer Using Atmospheric Pressure RF Cold Plasma Jet[J]. Chin. J. Semicond., 2007, 28(10): 1615.
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Etching Si Wafer Using Atmospheric Pressure RF Cold Plasma Jet
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Abstract
A new kind of discharging device with a RF cold plasma jet at atmospheric pressure is introduced,and it is utilized to conduct experimental research on silicon-etching.The characteristics of the etching rate depend on the input power,gas flow,and temperature of Si wafers.The maximal etching rate is 390nm/min.The etching effect is characterized by step instrument,optical microscopy,and SEM.Excellent etching homogeneity and satisfactory anisotropy can be obtained during material etching with this device.These results indicate that the silicon-etching operation with this atmospheric pressure device is simple and causes no material surface damage.-
Keywords:
- atmospheric pressure,
- RF,
- plasma etch,
- silicon
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References
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Proportional views
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