Chin. J. Semicond. > 2007, Volume 28 > Issue 10 > 1611-1614

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Effect of Power on Property of Plasma in Polysilicon Gate over Etch Process

Zhang Qingzhao, Xie Changqing, Liu Ming, Li Bing and Zhu Xiaoli

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Abstract: The relations between the parameters of plasma and those of RF power and gas flow were analyzed under the conditions of over etch step in semiconductor plasma etching,by Langmuir probe.The results show that as the RF power was increasing,the RF couple coefficient was comparatively stable.When in a local heating state,most of the electrons were in an adhesive status.The distribution of power couple space in the chamber can be improved as the RF power increases.These results can help to develop plasma dry etching.

Key words: plasma sheath theory dry etching Langmuir probe

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    Received: 18 August 2015 Revised: 02 June 2007 Online: Published: 01 October 2007

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      Zhang Qingzhao, Xie Changqing, Liu Ming, Li Bing, Zhu Xiaoli. Effect of Power on Property of Plasma in Polysilicon Gate over Etch Process[J]. Journal of Semiconductors, 2007, 28(10): 1611-1614. ****Zhang Q, Xie C Q, Liu M, Li B, Zhu X L. Effect of Power on Property of Plasma in Polysilicon Gate over Etch Process[J]. Chin. J. Semicond., 2007, 28(10): 1611.
      Citation:
      Zhang Qingzhao, Xie Changqing, Liu Ming, Li Bing, Zhu Xiaoli. Effect of Power on Property of Plasma in Polysilicon Gate over Etch Process[J]. Journal of Semiconductors, 2007, 28(10): 1611-1614. ****
      Zhang Q, Xie C Q, Liu M, Li B, Zhu X L. Effect of Power on Property of Plasma in Polysilicon Gate over Etch Process[J]. Chin. J. Semicond., 2007, 28(10): 1611.

      Effect of Power on Property of Plasma in Polysilicon Gate over Etch Process

      • Received Date: 2015-08-18
      • Accepted Date: 2007-02-28
      • Revised Date: 2007-06-02
      • Published Date: 2007-09-26

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