Chin. J. Semicond. > 2000, Volume 21 > Issue 2 > 146-150
|

CONTENTS

薄栅氧化层击穿特性的实验研究

刘红侠 and 郝跃

+ Author Affiliations

PDF

Key words: 击穿, 栅氧化层, 实验, 与时间有关的介质击穿(TDDB)

    • Search

    Advanced Search >>

    GET CITATION

    shu

    Export: BibTex EndNote

    Article Metrics

    Article views: 2422 Times PDF downloads: 1115 Times Cited by: 0 Times

    History

    Received: 20 August 2015 Revised: Online: Published: 01 February 2000

    Catalog

      Email This Article

      User name:
      Email:*请输入正确邮箱
      Code:*验证码错误
      Send
      Article Navigation >  Journal of Semiconductors  > 2000  >  21(2): 146-150
      刘红侠, 郝跃. 薄栅氧化层击穿特性的实验研究[J]. 半导体学报(英文版), 2000, 21(2): 146-150.
      Citation:
      刘红侠, 郝跃. 薄栅氧化层击穿特性的实验研究[J]. 半导体学报(英文版), 2000, 21(2): 146-150.
      shu

      • Received Date: 2015-08-20

      Catalog

        Journal of Semiconductors © 2017 All Rights Reserved   京ICP备05085259号-2

        /

        DownLoad:  Full-Size Img  PowerPoint
        Return
        Return