Chin. J. Semicond. > 2000, Volume 21 > Issue 2 > 151-155
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MOSFET衬底电流模型在深亚微米尺寸下的修正

孙自敏 , 刘理天 and 李志坚

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Key words: MOSFET, 衬底电流, 深亚微米

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    Received: 20 August 2015 Revised: Online: Published: 01 February 2000

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      Article Navigation >  Journal of Semiconductors  > 2000  >  21(2): 151-155
      孙自敏, 刘理天, 李志坚. MOSFET衬底电流模型在深亚微米尺寸下的修正[J]. 半导体学报(英文版), 2000, 21(2): 151-155.
      Citation:
      孙自敏, 刘理天, 李志坚. MOSFET衬底电流模型在深亚微米尺寸下的修正[J]. 半导体学报(英文版), 2000, 21(2): 151-155.
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      • Received Date: 2015-08-20

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