Chin. J. Semicond. > 2000, Volume 21 > Issue 2 > 156-160
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0.15μm薄膜全耗尽MOS/SOI器件的设计和研制

张兴 and 王阳元

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Key words: MOS/SOI器件, 薄膜, 设计

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    Received: 20 August 2015 Revised: Online: Published: 01 February 2000

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      Article Navigation >  Journal of Semiconductors  > 2000  >  21(2): 156-160
      张兴, 王阳元. 0.15μm薄膜全耗尽MOS/SOI器件的设计和研制[J]. 半导体学报(英文版), 2000, 21(2): 156-160.
      Citation:
      张兴, 王阳元. 0.15μm薄膜全耗尽MOS/SOI器件的设计和研制[J]. 半导体学报(英文版), 2000, 21(2): 156-160.
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      • Received Date: 2015-08-20

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