Chin. J. Semicond. > 2005, Volume 26 > Issue 1 > 88-91
|

CONTENTS

高性能1mm AlGaN/GaN功率HEMTs研制

邵刚, 刘新宇, 和致经, 刘键, 魏珂, 陈晓娟, 吴德馨, 王晓亮 and 陈宏

+ Author Affiliations

PDF

Abstract: 报道了基于蓝宝石衬底的高性能1mm AlGaN/GaN HEMTs功率器件.为了提高微波功率器件性能，采用新的欧姆接触和新型空气桥方案．测试表明，器件电流密度为0.784A/mm，跨导197mS/mm，击穿电压大于40V，截止态漏电较小，1mm栅宽器件的单位截止频率达到20GHz，最大振荡频率为28GHz，功率增益为11dB，功率密度为1.2W/mm,PAE为32%,两端口阻抗特性显示了在微波应用中的良好潜力．

    • Search

    Advanced Search >>

    GET CITATION

    shu

    Export: BibTex EndNote

    Article Metrics

    Article views: 3099 Times PDF downloads: 2501 Times Cited by: 0 Times

    History

    Received: 19 August 2015 Revised: Online: Published: 01 January 2005

    Catalog

      Email This Article

      User name:
      Email:*请输入正确邮箱
      Code:*验证码错误
      Send
      Article Navigation >  Journal of Semiconductors  > 2005  >  26(1): 88-91
      邵刚, 刘新宇, 和致经, 刘键, 魏珂, 陈晓娟, 吴德馨, 王晓亮, 陈宏. 高性能1mm AlGaN/GaN功率HEMTs研制[J]. Journal of Semiconductors, 2005, 26(1): 88-91. ****邵刚, 刘新宇, 和致经, 刘键, 魏珂, 陈晓娟, 吴德馨, 王晓亮, 陈宏, 高性能1mm AlGaN/GaN功率HEMTs研制[J]. Journal of Semiconductors, 2005, 26(1), 88-91
      Citation:
      邵刚, 刘新宇, 和致经, 刘键, 魏珂, 陈晓娟, 吴德馨, 王晓亮, 陈宏. 高性能1mm AlGaN/GaN功率HEMTs研制[J]. Journal of Semiconductors, 2005, 26(1): 88-91. ****
      邵刚, 刘新宇, 和致经, 刘键, 魏珂, 陈晓娟, 吴德馨, 王晓亮, 陈宏, 高性能1mm AlGaN/GaN功率HEMTs研制[J]. Journal of Semiconductors, 2005, 26(1), 88-91
      shu

      高性能1mm AlGaN/GaN功率HEMTs研制

      • Received Date: 2015-08-19

      Catalog

        Journal of Semiconductors © 2017 All Rights Reserved   京ICP备05085259号-2

        /

        DownLoad:  Full-Size Img  PowerPoint
        Return
        Return