Chin. J. Semicond. > 2007, Volume 28 > Issue S1 > 398-401
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Recessed-Gate AIGaN/GaN HEMTs with Field-Modulating Plate

Chen Tangsheng, Wang Xiaoliang, Jiao Gang, Zhong Shichang, Ren Chunjiang, Chen Chen and Li Fuxiao

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Abstract: AIGaN/GaN HEMTs Oil SiC substrate have been fabricated.Recessed·gate and field-modulating plate configuration have been used to suppress the current collapse and to improve breakdown voltage and power performance of the devices. The developed 1-mm gate width device exhibits a saturated output power of 9.05W with a power gain of 7.5dB and a power-added efficiency (PAE) of 46％ at 8GHz and 34V drain bias.

Key words: ：wide band-gap semiconductor, AlGaN/GaN, HEMTs, field modulating plate, gate recess

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    Received: 27 May 2016 Revised: Online: Published: 01 January 2007

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      Article Navigation >  Journal of Semiconductors  > 2007  >  28(S1): 398-401
      Chen Tangsheng, Wang Xiaoliang, Jiao Gang, Zhong Shichang, Ren Chunjiang, Chen Chen, Li Fuxiao. Recessed-Gate AIGaN/GaN HEMTs with Field-Modulating Plate[J]. Journal of Semiconductors, 2007, 28(S1): 398-401. ****Chen T S, Wang X L, Jiao G, Zhong S C, Ren C J, Chen C, Li F X. Recessed-Gate AIGaN/GaN HEMTs with Field-Modulating Plate[J]. Chin. J. Semicond., 2007, 28(S1): 398.
      Citation:
      Chen Tangsheng, Wang Xiaoliang, Jiao Gang, Zhong Shichang, Ren Chunjiang, Chen Chen, Li Fuxiao. Recessed-Gate AIGaN/GaN HEMTs with Field-Modulating Plate[J]. Journal of Semiconductors, 2007, 28(S1): 398-401. ****
      Chen T S, Wang X L, Jiao G, Zhong S C, Ren C J, Chen C, Li F X. Recessed-Gate AIGaN/GaN HEMTs with Field-Modulating Plate[J]. Chin. J. Semicond., 2007, 28(S1): 398.
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      Recessed-Gate AIGaN/GaN HEMTs with Field-Modulating Plate

      • National Key Laboratory of Monolithic Integrated Circuits and Modules，Nanjing Electronic Device Institute 210016，China,Institute ofSemiconductors，Chinese Academy of Sciences，Beijing 100083，China,National Key Laboratory of Monolithic Integrated Circuits and Modules，Nanjing Electronic Device Institute 210016，China,National Key Laboratory of Monolithic Integrated Circuits and Modules，Nanjing Electronic Device Institute 210016，China,National Key Laboratory of Monolithic Integrated Circuits and Modules，Nanjing Electronic Device Institute 210016，China,National Key Laboratory of Monolithic Integrated Circuits and Modules，Nanjing Electronic Device Institute 210016，China and National Key Laboratory of Monolithic Integrated Circuits and Modules，Nanjing Electronic Device Institute 210016，China

      • Received Date: 2016-05-27
      • Published Date: 2016-04-28

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