Recessed-Gate AIGaN/GaN HEMTs with Field-Modulating Plate

Chen Tangsheng; Wang Xiaoliang; Jiao Gang; Zhong Shichang; Ren Chunjiang; Chen Chen; Li Fuxiao

Chin. J. Semicond. > 2007, Volume 28 > Issue S1 > 398-401

Recessed-Gate AIGaN/GaN HEMTs with Field-Modulating Plate

Chen Tangsheng, Wang Xiaoliang, Jiao Gang, Zhong Shichang, Ren Chunjiang, Chen Chen and Li Fuxiao

+ Author Affiliations

Abstract: AIGaN/GaN HEMTs Oil SiC substrate have been fabricated.Recessed·gate and field-modulating plate configuration have been used to suppress the current collapse and to improve breakdown voltage and power performance of the devices. The developed 1-mm gate width device exhibits a saturated output power of 9.05W with a power gain of 7.5dB and a power-added efficiency (PAE) of 46％ at 8GHz and 34V drain bias.

Key words: ：wide band-gap semiconductor, AlGaN/GaN, HEMTs, field modulating plate, gate recess

1	Printed stretchable circuit on soft elastic substrate for wearable application Wei Yuan, Xinzhou Wu, Weibing Gu, Jian Lin, Zheng Cui, et al. Journal of Semiconductors, 2018, 39(1): 015002. doi: 10.1088/1674-4926/39/1/015002
2	Engineering in-plane silicon nanowire springs for highly stretchable electronics Zhaoguo Xue, Taige Dong, Zhimin Zhu, Yaolong Zhao, Ying Sun, et al. Journal of Semiconductors, 2018, 39(1): 011001. doi: 10.1088/1674-4926/39/1/011001
3	Colloidal synthesis and characterization of Cu₂ZnSnS₄ nanoplates S. Ananthakumar, J. Ram Kumar, S. Moorthy Babu Journal of Semiconductors, 2017, 38(3): 033007. doi: 10.1088/1674-4926/38/3/033007
4	A readout integrated circuit based on DBI-CTIA and cyclic ADC for MEMS-arraybased focal plane Miao Liu, Dong Wu, Zheyao Wang Journal of Semiconductors, 2016, 37(11): 115002. doi: 10.1088/1674-4926/37/11/115002
5	Influences of ICP etching damages on the electronic properties of metal field plate 4H-SiC Schottky diodes Hui Wang, Yingxi Niu, Fei Yang, Yong Cai, Zehong Zhang, et al. Journal of Semiconductors, 2015, 36(10): 104006. doi: 10.1088/1674-4926/36/10/104006
6	Growth and fabrication of a mid-wavelength infrared focal plane array based on type-Ⅱ InAs/GaSb superlattices Guowei Wang, Wei Xiang, Yingqiang Xu, Liang Zhang, Zhenyu Peng, et al. Journal of Semiconductors, 2013, 34(11): 114012. doi: 10.1088/1674-4926/34/11/114012
7	Dry etching of new phase-change material Al_1.3Sb₃Te in CF₄/Ar plasma Zhang Xu, Rao Feng, Liu Bo, Peng Cheng, Zhou Xilin, et al. Journal of Semiconductors, 2012, 33(10): 102003. doi: 10.1088/1674-4926/33/10/102003
8	Statistical key variable analysis and model-based control for improvement performance in a deep reactive ion etching process Chen Shan, Pan Tianhong, Li Zhengming, Jang Shi-Shang Journal of Semiconductors, 2012, 33(6): 066002. doi: 10.1088/1674-4926/33/6/066002
9	Optical and electrical properties of porous silicon layer formed on the textured surface by electrochemical etching Ou Weiying, Zhao Lei, Diao Hongwei, Zhang Jun, Wang Wenjing, et al. Journal of Semiconductors, 2011, 32(5): 056002. doi: 10.1088/1674-4926/32/5/056002
10	Influence of voltage on photo-electrochemical etching of n-type macroporous silicon arrays Wang Guozheng, Fu Shencheng, Chen Li, Wang Ji, Qin Xulei, et al. Journal of Semiconductors, 2010, 31(11): 116002. doi: 10.1088/1674-4926/31/11/116002
11	Chemical etching of a GaSb crystal incorporated with Mn grown by the Bridgman method under microgravity conditions Chen Xiaofeng, Chen Nuofu, Wu Jinliang, Zhang Xiulan, Chai Chunlin, et al. Journal of Semiconductors, 2009, 30(8): 083006. doi: 10.1088/1674-4926/30/8/083006
12	Effect of chemical polish etching and post annealing on the performance of silicon heterojunction solar cells Jiang Zhenyu, Dou Yuhua, Zhang Yu, Zhou Yuqin, Liu Fengzhen, et al. Journal of Semiconductors, 2009, 30(8): 084010. doi: 10.1088/1674-4926/30/8/084010
13	Influence of Etching Depth on Characteristics of GaN/Si Blue LEDs Zhang Ping, Liu Junlin, Zheng Changda, Jiang Fengyi Journal of Semiconductors, 2008, 29(3): 563-565.
14	Selective Dry Etching of GaAs/AlAs Based on SiCl4/SF6 Mixtures by ICP Tong Zhaomin, Xue Chenyang, Zhang Binzhen, Wang Yong, Zhang Wendong, et al. Journal of Semiconductors, 2008, 29(6): 1194-1197.
15	Duration of Startup of GaAs Wet Etching Measured by Infrared-Image of Linear Liquid Film Liu Lin, Ye Yutang, 吴云峰, Wu Yunfeng, 陆佳佳, et al. Chinese Journal of Semiconductors , 2007, 28(2): 222-226.
16	Influence of Etching on the Luminescence Characteristic of Strained InAsP/InGaAsP Multiple Quantum Wells。 Cao Meng, Wu Huizhen, Lao Yanfeng, Liu Cheng, Xie Zhengsheng, et al. Chinese Journal of Semiconductors , 2007, 28(S1): 467-470.
17	Cl2-Based Dry Etching of GaN Using Inductively Coupled Plasma Liu Beiping, Li Xiaoliang, Zhu Haibo Chinese Journal of Semiconductors , 2006, 27(7): 1335-1338.
18	9μm Cutoff 128×128 AlGaAs/GaAs Quantum Well Infrared Photodetector Focal Plane Arrays Li Xianjie, Liu Yingbin, Feng Zhen, Guo Fan, Zhao Yonglin, et al. Chinese Journal of Semiconductors , 2006, 27(8): 1355-1359.
19	Optimization of Plasma Etching Parameters and Mask for Silica Optical Waveguides Chinese Journal of Semiconductors , 2005, 26(6): 1104-1110.
20	Application of Wet Chemical Etching in Fabrication Process of GaAs/AlGaAs Quantum Dot Arrays Chinese Journal of Semiconductors , 2000, 21(1): 22-27.

Search

GET CITATION

Gao Qun, Zhang Jingwen, Hou Xun. Etching Process of Back-Illuminated ZnO Ultraviolet Focal Plane Array Imagers[J]. Journal of Semiconductors, 2008, 29(12): 2304-2306.

Gao Q, Zhang J W, Hou X. Etching Process of Back-Illuminated ZnO Ultraviolet Focal Plane Array Imagers[J]. J. Semicond., 2008, 29(12): 2304.

Export: BibTex EndNote

Article Metrics

Article views: 2577 Times PDF downloads: 321 Times Cited by: 0 Times

History

Received: 27 May 2016 Revised: Online: Published: 01 January 2007

AIGaN/GaN HEMTs Oil SiC substrate have been fabricated.Recessed·gate and field-modulating plate configuration have been used to suppress the current collapse and to improve breakdown voltage and power performance of the devices. The developed 1-mm gate width device exhibits a saturated output power of 9.05W with a power gain of 7.5dB and a power-added efficiency (PAE) of 46％ at 8GHz and 34V drain bias.

Recessed-Gate AIGaN/GaN HEMTs with Field-Modulating Plate

Search

GET CITATION

Share:

Article Metrics

History

Catalog

Email This Article

Recessed-Gate AIGaN/GaN HEMTs with Field-Modulating Plate

Abstract

References

Proportional views

Catalog

Recessed-Gate AIGaN/GaN HEMTs with Field-Modulating Plate

Search

GET CITATION

Share:

Article Metrics

History

Catalog

Email This Article

Recessed-Gate AIGaN/GaN HEMTs with Field-Modulating Plate

Abstract

References

Proportional views

Catalog

Export File

Citation

Format

Content