| Citation: |
Wang Xiaoliang, Wang Cuimei, Hu Guoxin, Ma Zhiyong, Xiao Hongling, Ran Junxue, Luo Weijun, Tang Jian, Li Jianping, Li Jinmin, Wang Zhanguo. High Quality AIGaN/GaN HEMT Materials Grown on SiC Substrates[J]. Journal of Semiconductors, 2007, 28(S1): 402-406.
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Wang X L, Wang C M, Hu G X, Ma Z Y, Xiao H L, Ran J X, Luo W J, Tang J, Li J P, Li J M, Wang Z G. High Quality AIGaN/GaN HEMT Materials Grown on SiC Substrates[J]. Chin. J. Semicond., 2007, 28(S1): 402.
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High Quality AIGaN/GaN HEMT Materials Grown on SiC Substrates
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Abstract
High quality A1GaN/GaN HEMT materials were successfully fabricated on 4H.and 6H.SiC substrates bv MoCVD method.High electron mobility and density of 2215cm2/(V·s) and 1.044×10^13cm-2 were obtained at room temperature. Average sheet resistance lower than 253.7n/口 and resistance uniformity better than 2.02％ were also realized on the 2-inch HEMT wafers.TCXRD and AFM measurements showed that the HEMT material has a high crystal quality and smooth sur. face morphology. Power devices with gate width of lmm were fabricated using the HEMT wafers.At 8GHz，the output power density is 8.25W/mm and the associated PAE is 39.4％. The output power was reduced only 0.1dBm after half an hour, sug gesting the device has a comparatively high reliability.-
Keywords:
- AIGaN/GaN,
- HEMT,
- MOCVD,
- power device
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References
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Proportional views
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