| Citation: |
Chen Chen, Chen Tangsheng, Ren Chunjiang, Xue Fangshi. Characteristic of the Recessed-Gate AIGaN/GaN HEMT with a Field Plate[J]. Journal of Semiconductors, 2007, 28(S1): 407-410.
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Chen C, Chen T S, Ren C J, Xue F S. Characteristic of the Recessed-Gate AIGaN/GaN HEMT with a Field Plate[J]. Chin. J. Semicond., 2007, 28(S1): 407.
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Characteristic of the Recessed-Gate AIGaN/GaN HEMT with a Field Plate
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Abstract
Three kinds of AIGaN/GaN HEMTs have been fabricated：(a) non·recessed HEMT without FP HEMT (b) non· recessed FP HEMT，and(c)recessed FP HEMT.Thought contrast the dynamic I-V and microwave measurement to the three devices，we find that the field plate and gate recess can modulate the field in the channel，then suppress the current collapse and enhanced break-down voltage and improve the output power.A lmm gate width device with this structure exhibited a saturated output power of more than 10W.-
Keywords:
- AlGaN/GaN,
- HEMT,
- field modulating plate,
- gate recess
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References
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Proportional views
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