| Citation: |
Liu Dan, Chen Xiaojuan, Luo Weijun, Li Chengzhan, Lin Xinyu, He Zhijing. Extraction of the Small-Signal Equivalent Circuit Parameters of the AIGaN/GaN HEMT Device[J]. Journal of Semiconductors, 2007, 28(S1): 411-413.
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Liu D, Chen X J, Luo W J, Li C Z, Lin X Y, He Z J. Extraction of the Small-Signal Equivalent Circuit Parameters of the AIGaN/GaN HEMT Device[J]. Chin. J. Semicond., 2007, 28(S1): 411.
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Extraction of the Small-Signal Equivalent Circuit Parameters of the AIGaN/GaN HEMT Device
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Abstract
This paper USes ColdFET and broadband small-signal extracting methods to extract the AIGaN/GaN HEMT smallsignal parameters. And it USeS analog software(ADS)to build a small-signal equivalent circuit model and optimize the values of the parameters.It can be quick to extract the parameters and gives the device process some information and advices. -
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