| Citation: |
Ma Long, Zhang Yang, Dai Yang, Yang Fuhua, Zeng Yiping, Wang Liangchen. Monolithic Integration of Resonant Tunneling Diodes and High Electron Mobility Transistors on InP Substrates[J]. Journal of Semiconductors, 2007, 28(S1): 414-417.
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Ma L, Zhang Y, Dai Y, Yang F H, Zeng Y P, Wang L C. Monolithic Integration of Resonant Tunneling Diodes and High Electron Mobility Transistors on InP Substrates[J]. Chin. J. Semicond., 2007, 28(S1): 414.
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Monolithic Integration of Resonant Tunneling Diodes and High Electron Mobility Transistors on InP Substrates
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Abstract
The integrated structures of InGaAs/AIAs resonant tunneling diode(RTD)and InGaAs/InatAs high electron mobility transistor(HEMT) are epitaxially grown by molecular beam epitaxy on semi.insulating InP SUbstrates.The maxi. mum peak·to-valley current ratio(PVCR) of the fabricated RTD is 18.39 at room temperature and the resistive cutoff fre. quency is larger than 20.05GHz.The cutoff frequency and the maximum transconductance for the lmm gate length HEMT are 19.8GHz and 237mS/mm，respectively.The multiple value logic which consists of multiple RTDs connected in series。and the characteristics that HEMT and RTD are in parallel connection are also demonstrated. -
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Proportional views
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