Chin. J. Semicond. > 2001, Volume 22 > Issue 1 > 66-68
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宽带隙立方氮化硼薄膜制备

邓金祥 , 王波 , 严辉 and 陈光华

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Key words: 立方氮化硼, 薄膜, 射频溅射

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    Received: 19 August 2015 Revised: Online: Published: 01 January 2001

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      Article Navigation >  Journal of Semiconductors  > 2001  >  22(1): 66-68
      邓金祥, 王波, 严辉, 陈光华. 宽带隙立方氮化硼薄膜制备[J]. 半导体学报(英文版), 2001, 22(1): 66-68.
      Citation:
      邓金祥, 王波, 严辉, 陈光华. 宽带隙立方氮化硼薄膜制备[J]. 半导体学报(英文版), 2001, 22(1): 66-68.
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      • Received Date: 2015-08-19

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