Chin. J. Semicond. > 1993, Volume 14 > Issue 8 > 468-473
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用沟道产额角分布技术研究硅中超固溶度激活杂质的失活机理

徐立 , 钱佩信 and 李志坚

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    Received: 20 August 2015 Revised: Online: Published: 01 August 1993

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      Article Navigation >  Journal of Semiconductors  > 1993  >  14(8): 468-473
      徐立, 钱佩信, 李志坚. 用沟道产额角分布技术研究硅中超固溶度激活杂质的失活机理[J]. 半导体学报(英文版), 1993, 14(8): 468-473.
      Citation:
      徐立, 钱佩信, 李志坚. 用沟道产额角分布技术研究硅中超固溶度激活杂质的失活机理[J]. 半导体学报(英文版), 1993, 14(8): 468-473.
      shu

      • Received Date: 2015-08-20

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