Chin. J. Semicond. > 1989, Volume 10 > Issue 3 > 207-216
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钨硅化物砷化镓Schottky接触的形成和特性

祝忠德 , 许虹 , 宁宝俊 and 李晓光

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    Received: 19 August 2015 Revised: Online: Published: 01 March 1989

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      Article Navigation >  Journal of Semiconductors  > 1989  >  10(3): 207-216
      祝忠德, 许虹, 宁宝俊, 李晓光. 钨硅化物砷化镓Schottky接触的形成和特性[J]. 半导体学报(英文版), 1989, 10(3): 207-216.
      Citation:
      祝忠德, 许虹, 宁宝俊, 李晓光. 钨硅化物砷化镓Schottky接触的形成和特性[J]. 半导体学报(英文版), 1989, 10(3): 207-216.
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      • Received Date: 2015-08-19

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