Chin. J. Semicond. > 1989, Volume 10 > Issue 3 > 217-221
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退火对Ar~+激光再结晶多晶硅/二氧化硅界面性质的影响

陈坚 , 黄信凡 and 鲍希茂

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    Received: 19 August 2015 Revised: Online: Published: 01 March 1989

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      Article Navigation >  Journal of Semiconductors  > 1989  >  10(3): 217-221
      陈坚, 黄信凡, 鲍希茂. 退火对Ar~+激光再结晶多晶硅/二氧化硅界面性质的影响[J]. 半导体学报(英文版), 1989, 10(3): 217-221.
      Citation:
      陈坚, 黄信凡, 鲍希茂. 退火对Ar~+激光再结晶多晶硅/二氧化硅界面性质的影响[J]. 半导体学报(英文版), 1989, 10(3): 217-221.
      shu

      • Received Date: 2015-08-19

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