Chin. J. Semicond. > 1989, Volume 10 > Issue 3 > 222-226
|

CONTENTS

MBE高掺Be p-GaAs中E_g+△_0等高于带边的发光

胡天斗 , 许继宗 , 梁基本 and 庄蔚华

+ Author Affiliations

PDF

    • Search

    Advanced Search >>

    GET CITATION

    shu

    Export: BibTex EndNote

    Article Metrics

    Article views: 2462 Times PDF downloads: 1023 Times Cited by: 0 Times

    History

    Received: 19 August 2015 Revised: Online: Published: 01 March 1989

    Catalog

      Email This Article

      User name:
      Email:*请输入正确邮箱
      Code:*验证码错误
      Send
      Article Navigation >  Journal of Semiconductors  > 1989  >  10(3): 222-226
      胡天斗, 许继宗, 梁基本, 庄蔚华. MBE高掺Be p-GaAs中E_g+△_0等高于带边的发光[J]. 半导体学报(英文版), 1989, 10(3): 222-226.
      Citation:
      胡天斗, 许继宗, 梁基本, 庄蔚华. MBE高掺Be p-GaAs中E_g+△_0等高于带边的发光[J]. 半导体学报(英文版), 1989, 10(3): 222-226.
      shu

      • Received Date: 2015-08-19

      Catalog

        Journal of Semiconductors © 2017 All Rights Reserved   京ICP备05085259号-2

        /

        DownLoad:  Full-Size Img  PowerPoint
        Return
        Return