Chin. J. Semicond. > 1997, Volume 18 > Issue 8 > 631-635
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InAs/GaAs自组织生长量子点结构中浸润层光致发光研究

吕振东 , 徐仲英 , 郑宝真 , 许继宗 , 王玉琦 , 王建农 and 葛惟锟

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    吕振东, 徐仲英, 郑宝真, 许继宗, 王玉琦, 王建农, 葛惟锟. InAs/GaAs自组织生长量子点结构中浸润层光致发光研究[J]. 半导体学报(英文版), 1997, 18(8): 631-635.
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    Received: 19 August 2015 Revised: Online: Published: 01 August 1997

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      Article Navigation >  Journal of Semiconductors  > 1997  >  18(8): 631-635
      吕振东, 徐仲英, 郑宝真, 许继宗, 王玉琦, 王建农, 葛惟锟. InAs/GaAs自组织生长量子点结构中浸润层光致发光研究[J]. 半导体学报(英文版), 1997, 18(8): 631-635.
      Citation:
      吕振东, 徐仲英, 郑宝真, 许继宗, 王玉琦, 王建农, 葛惟锟. InAs/GaAs自组织生长量子点结构中浸润层光致发光研究[J]. 半导体学报(英文版), 1997, 18(8): 631-635.
      shu

      • Received Date: 2015-08-19

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