Chin. J. Semicond. > 2004, Volume 25 > Issue 2 > 179-184
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p沟道锗/硅异质纳米结构MOSFET存储器及其逻辑阵列

杨红官 , 施毅 , 闾锦 , 濮林 , 沈波 , 张荣 and 郑有炓

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Key words: 锗/硅, 异质纳米结构, 存储器, 空穴隧穿, 数值模拟

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    Received: 19 August 2015 Revised: Online: Published: 01 February 2004

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      Article Navigation >  Journal of Semiconductors  > 2004  >  25(2): 179-184
      杨红官, 施毅, 闾锦, 濮林, 沈波, 张荣, 郑有炓. p沟道锗/硅异质纳米结构MOSFET存储器及其逻辑阵列[J]. 半导体学报(英文版), 2004, 25(2): 179-184.
      Citation:
      杨红官, 施毅, 闾锦, 濮林, 沈波, 张荣, 郑有炓. p沟道锗/硅异质纳米结构MOSFET存储器及其逻辑阵列[J]. 半导体学报(英文版), 2004, 25(2): 179-184.
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      • Received Date: 2015-08-19

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