| Citation: |
Chen Wanjun, Zhang Bo, Li Zhaoji, Deng Xiaochuan. Optimum Design of PSJ for High-Voltage Devices[J]. Journal of Semiconductors, 2006, 27(6): 1089-1093.
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Chen W J, Zhang B, Li Z J, Deng X C. Optimum Design of PSJ for High-Voltage Devices[J]. Chin. J. Semicond., 2006, 27(6): 1089.
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Optimum Design of PSJ for High-Voltage Devices
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Abstract
A novel design for a high-voltage PSJ (partial super junction) is proposed.The ratio of the SJ region varies from 0 to 1.Through analysis of the specific on-resistance of the PSJ device,a theory of PSJ optimization is developed.Based on this result,the specific on-resistances at different breakdown voltages are calculated and compared with the simulation and experimental results.The influence on the specific on-resistance of the PSJ is discussed in detail,including the punch-through factor of the BAL region η,the normalized depth of p column r,the aspect ratio of p column A,and the uniformity of the concentration of the SJ region.The theoretical results agree with the simulation. The theory is an academic element for the optimization of PSJS for high-voltage devices. -
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