Abstract: A novel physical model is proposed for monolithic RF spiral inductor on high-loss silicon substrate.This model takes the following factors into account: the functions of skin effect,proximity effect,and eddy current losses in the substrate to frequency-dependent series parameters Ls and Rs in light of modified partial equivalent element circuit methodology and a full-coupled transformer loop.Also, distributed characteristics of parasitic capacitance are captured by a 2π equivalent-circuit.Up to 15GHz,the model is quite accurate.The results are within 8% of data from a full-wave electromagnetic field simulator,including equivalent inductor Leff,resistor Reff,and quality factor Q.Hopefully,it can be applied to further theory research and optimum design of RFIC spiral inductors on Si.

Key words: on-chip spiral inductors, physical model, 2π equivalent-circuit, skin effect, proximity effect, eddy current loss