| Citation: |
Fang Jian, Wu Chao, Qiao Ming, Zhang Bo, Li Zhaoji. A Dynamic-State Model of an NPT-IGBT with Localized Lifetime Control[J]. Journal of Semiconductors, 2006, 27(6): 1078-1083.
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Fang J, Wu C, Qiao M, Zhang B, Li Z J. A Dynamic-State Model of an NPT-IGBT with Localized Lifetime Control[J]. Chin. J. Semicond., 2006, 27(6): 1078.
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A Dynamic-State Model of an NPT-IGBT with Localized Lifetime Control
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Abstract
A novel dynamic-state model of an NPT-IGBT with localized lifetime control is proposed and is verified by the 2D simulator MEDICI.In this model,the quasi-static-state approximation is used,and the turn-off stage is divided into two stages, including a fast turn-off and a slow turn-off, to characterize the turn-off.With this model,the dynamic characteristics of a localized lifetime control NPT-IGBT,as influenced by the parameters of the localized low-lifetime region,are discussed in detail.This model is helpful for understanding the physical mechanisms in an NPT-IGBT with localized lifetime control during the turn-off period and can be used to the direct design and optimization of an NPT-IGBT.The modeling and analysis methods used here are universal and also can be used in other conductivity modulation power devices. -
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