Chin. J. Semicond. > 1994, Volume 15 > Issue 5 > 361-366

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TiSi2 Polycide LDD MOS工艺研究

徐秋霞，龚义元，张建欣，扈焕章，汪锁发，李卫宁

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    Received: 18 August 2015 Revised: Online: Published: 01 May 1994

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      Article Navigation >  Journal of Semiconductors  > 1994  >  15(5): 361-366
      徐秋霞，龚义元，张建欣，扈焕章，汪锁发，李卫宁. TiSi2 Polycide LDD MOS工艺研究[J]. 半导体学报(英文版), 1994, 15(5): 361-366.
      Citation:
      徐秋霞，龚义元，张建欣，扈焕章，汪锁发，李卫宁. TiSi2 Polycide LDD MOS工艺研究[J]. 半导体学报(英文版), 1994, 15(5): 361-366.
      shu

      • Received Date: 2015-08-18

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