Chin. J. Semicond. > 1994, Volume 15 > Issue 5 > 354-360
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键合Si／SiO2／Si结构的C－V特征

黄庆安，陈军宁，张会珍，童勤义

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    黄庆安，陈军宁，张会珍，童勤义. 键合Si／SiO2／Si结构的C－V特征[J]. 半导体学报(英文版), 1994, 15(5): 354-360.
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    Received: 18 August 2015 Revised: Online: Published: 01 May 1994

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      Article Navigation >  Journal of Semiconductors  > 1994  >  15(5): 354-360
      黄庆安，陈军宁，张会珍，童勤义. 键合Si／SiO2／Si结构的C－V特征[J]. 半导体学报(英文版), 1994, 15(5): 354-360.
      Citation:
      黄庆安，陈军宁，张会珍，童勤义. 键合Si／SiO2／Si结构的C－V特征[J]. 半导体学报(英文版), 1994, 15(5): 354-360.
      shu

      • Received Date: 2015-08-18

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