Chin. J. Semicond. > 1995, Volume 16 > Issue 9 > 695-699
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多晶硅栅光刻前后注F对MOS器件辐照特性的影响

张国强，严荣良，余学锋，罗来会，任迪远，赵元富，胡浴红

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    Received: 19 August 2015 Revised: Online: Published: 01 September 1995

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      Article Navigation >  Journal of Semiconductors  > 1995  >  16(9): 695-699
      张国强，严荣良，余学锋，罗来会，任迪远，赵元富，胡浴红. 多晶硅栅光刻前后注F对MOS器件辐照特性的影响[J]. 半导体学报(英文版), 1995, 16(9): 695-699.
      Citation:
      张国强，严荣良，余学锋，罗来会，任迪远，赵元富，胡浴红. 多晶硅栅光刻前后注F对MOS器件辐照特性的影响[J]. 半导体学报(英文版), 1995, 16(9): 695-699.
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      • Received Date: 2015-08-19

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