Chin. J. Semicond. > 2005, Volume 26 > Issue 10 > 1983-1988
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用阱作高阻漂移区的LDMOS导通电阻的解析模型

孟坚 , 高珊 , 陈军宁 , 柯导明 , 孙伟锋 , 时龙兴 and 徐超

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Key words: 阱区, 双扩散MOS晶体管, 导通电阻, 解析模型

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    Received: 19 August 2015 Revised: Online: Published: 01 October 2005

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      Article Navigation >  Journal of Semiconductors  > 2005  >  26(10): 1983-1988
      孟坚, 高珊, 陈军宁, 柯导明, 孙伟锋, 时龙兴, 徐超. 用阱作高阻漂移区的LDMOS导通电阻的解析模型[J]. 半导体学报(英文版), 2005, 26(10): 1983-1988.
      Citation:
      孟坚, 高珊, 陈军宁, 柯导明, 孙伟锋, 时龙兴, 徐超. 用阱作高阻漂移区的LDMOS导通电阻的解析模型[J]. 半导体学报(英文版), 2005, 26(10): 1983-1988.
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      • Received Date: 2015-08-19

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