Chin. J. Semicond. > 2005, Volume 26 > Issue 10 > 1979-1982
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八羟基喹啉锌非晶薄膜器件的制备和开关特性

时军朋 , 温振超 , 宋长安 , 陈殷 and 彭应全

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Key words: 八羟基喹啉锌, 开关特性, X射线衍射, I-V特性曲线

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    Received: 19 August 2015 Revised: Online: Published: 01 October 2005

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      Article Navigation >  Journal of Semiconductors  > 2005  >  26(10): 1979-1982
      时军朋, 温振超, 宋长安, 陈殷, 彭应全. 八羟基喹啉锌非晶薄膜器件的制备和开关特性[J]. 半导体学报(英文版), 2005, 26(10): 1979-1982.
      Citation:
      时军朋, 温振超, 宋长安, 陈殷, 彭应全. 八羟基喹啉锌非晶薄膜器件的制备和开关特性[J]. 半导体学报(英文版), 2005, 26(10): 1979-1982.
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      • Received Date: 2015-08-19

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