Chin. J. Semicond. > 2003, Volume 24 > Issue 2 > 122-126
|

CONTENTS

0.275μm nMOST's中陷阱辅助隧穿电流对漏端LDD区DCIV谱峰的影响(英文)

刘东明 , 杨国勇 , 王金延 , 许铭真 and 谭长华

+ Author Affiliations

PDF

Key words: direct-currentcurrentvoltage(DCIV), 热电子, 可能性, 陷阱辅助隧穿电流, 电荷泵(CP)

    • Search

    Advanced Search >>

    GET CITATION

    shu

    Export: BibTex EndNote

    Article Metrics

    Article views: 2669 Times PDF downloads: 805 Times Cited by: 0 Times

    History

    Received: 20 August 2015 Revised: Online: Published: 01 February 2003

    Catalog

      Email This Article

      User name:
      Email:*请输入正确邮箱
      Code:*验证码错误
      Send
      Article Navigation >  Journal of Semiconductors  > 2003  >  24(2): 122-126
      刘东明, 杨国勇, 王金延, 许铭真, 谭长华. 0.275μm nMOST's中陷阱辅助隧穿电流对漏端LDD区DCIV谱峰的影响(英文)[J]. 半导体学报(英文版), 2003, 24(2): 122-126.
      Citation:
      刘东明, 杨国勇, 王金延, 许铭真, 谭长华. 0.275μm nMOST's中陷阱辅助隧穿电流对漏端LDD区DCIV谱峰的影响(英文)[J]. 半导体学报(英文版), 2003, 24(2): 122-126.
      shu

      • Received Date: 2015-08-20

      Catalog

        Journal of Semiconductors © 2017 All Rights Reserved   京ICP备05085259号-2

        /

        DownLoad:  Full-Size Img  PowerPoint
        Return
        Return