Chin. J. Semicond. > 2003, Volume 24 > Issue 2 > 122-126
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0.275μm nMOST's中陷阱辅助隧穿电流对漏端LDD区DCIV谱峰的影响(英文)

刘东明 , 杨国勇 , 王金延 , 许铭真 and 谭长华

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Key words: direct-currentcurrentvoltage(DCIV), 热电子, 可能性, 陷阱辅助隧穿电流, 电荷泵(CP)

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    Received: 20 August 2015 Revised: Online: Published: 01 February 2003

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      Article Navigation >  Journal of Semiconductors  > 2003  >  24(2): 122-126
      刘东明, 杨国勇, 王金延, 许铭真, 谭长华. 0.275μm nMOST's中陷阱辅助隧穿电流对漏端LDD区DCIV谱峰的影响(英文)[J]. 半导体学报(英文版), 2003, 24(2): 122-126.
      Citation:
      刘东明, 杨国勇, 王金延, 许铭真, 谭长华. 0.275μm nMOST's中陷阱辅助隧穿电流对漏端LDD区DCIV谱峰的影响(英文)[J]. 半导体学报(英文版), 2003, 24(2): 122-126.
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      • Received Date: 2015-08-20

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