Chin. J. Semicond. > 1982, Volume 3 > Issue 5 > 410-412
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用光谱法研究砷离子注入硅的退火

林树汉 and 莫党

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    Received: 20 August 2015 Revised: Online: Published: 01 May 1982

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      Article Navigation >  Journal of Semiconductors  > 1982  >  3(5): 410-412
      林树汉, 莫党. 用光谱法研究砷离子注入硅的退火[J]. 半导体学报(英文版), 1982, 3(5): 410-412.
      Citation:
      林树汉, 莫党. 用光谱法研究砷离子注入硅的退火[J]. 半导体学报(英文版), 1982, 3(5): 410-412.
      shu

      • Received Date: 2015-08-20

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