Chin. J. Semicond. > 1982, Volume 3 > Issue 5 > 404-409
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高频C-V方法测量埋沟电荷耦合器件的沟道电势

崔成烈 , 傅志煌 and 吴瑞华

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    Received: 20 August 2015 Revised: Online: Published: 01 May 1982

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      Article Navigation >  Journal of Semiconductors  > 1982  >  3(5): 404-409
      崔成烈, 傅志煌, 吴瑞华. 高频C-V方法测量埋沟电荷耦合器件的沟道电势[J]. 半导体学报(英文版), 1982, 3(5): 404-409.
      Citation:
      崔成烈, 傅志煌, 吴瑞华. 高频C-V方法测量埋沟电荷耦合器件的沟道电势[J]. 半导体学报(英文版), 1982, 3(5): 404-409.
      shu

      • Received Date: 2015-08-20

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