Chin. J. Semicond. > 2001, Volume 22 > Issue 7 > 841-845
|

CONTENTS

一种抗辐射加固功率器件──VDMNOSFET(英文)

刘英坤 , 梁春广 , 王长河 and 李思渊

+ Author Affiliations

PDF

Key words: 抗辐射加固, 双层栅介质, 功率VDMNOSFET

    • Search

    Advanced Search >>

    GET CITATION

    shu

    Export: BibTex EndNote

    Article Metrics

    Article views: 2497 Times PDF downloads: 1353 Times Cited by: 0 Times

    History

    Received: 20 August 2015 Revised: Online: Published: 01 July 2001

    Catalog

      Email This Article

      User name:
      Email:*请输入正确邮箱
      Code:*验证码错误
      Send
      Article Navigation >  Journal of Semiconductors  > 2001  >  22(7): 841-845
      刘英坤, 梁春广, 王长河, 李思渊. 一种抗辐射加固功率器件──VDMNOSFET(英文)[J]. 半导体学报(英文版), 2001, 22(7): 841-845.
      Citation:
      刘英坤, 梁春广, 王长河, 李思渊. 一种抗辐射加固功率器件──VDMNOSFET(英文)[J]. 半导体学报(英文版), 2001, 22(7): 841-845.
      shu

      • Received Date: 2015-08-20

      Catalog

        Journal of Semiconductors © 2017 All Rights Reserved   京ICP备05085259号-2

        /

        DownLoad:  Full-Size Img  PowerPoint
        Return
        Return