Citation: |
Zhu Yangjun, Miao Qinghai, Zhang Xinghua, Lu Shuojin. Verification of the Excessive Thermotaxis Effect of Low Current Based on Actual Junction Temperature Distribution[J]. Journal of Semiconductors, 2007, 28(7): 1112-1116.
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Zhu Y J, Miao Q H, Zhang X H, Lu S J. Verification of the Excessive Thermotaxis Effect of Low Current Based on Actual Junction Temperature Distribution[J]. Chin. J. Semicond., 2007, 28(7): 1112.
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Verification of the Excessive Thermotaxis Effect of Low Current Based on Actual Junction Temperature Distribution
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Abstract
Using the junction temperature distribution as determined from infrared imaging,the thermal spectrum curve is obtained by thermal spectrum analysis for use in creating a "sub-transistors in parallel connection" model.Based on the model,from theoretical calculation and experiment,the validity of the excessive thermotaxis effect of low current is verified.For current passing through a pn junction in a non-uniform temperature distribution,there is much more thermotaxis at low current than at high current,i.e.,with decreasing measured current,the ratio of the current density at high-temperature to that at low-temperature increases,and the effective area decreases.Based on these characteristics,the electro-thermal instability and the degree of uniformity of the junction temperature distribution can be studied.This has great significance for the reliability analysis of semiconductor devices. -
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