| Citation: |
Li Jiaye, Zhao Yongmei, Liu Xingfang, Sun Guosheng, Wang Lei, Zhao Wanshun, Luo Muchang, Zeng Yiping, Li Jinmin. Fast Epitaxy of 3C-SiC Grown on Si Substrate[J]. Journal of Semiconductors, 2007, 28(S1): 218-220.
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Li J Y, Zhao Y M, Liu X F, Sun G S, Wang L, Zhao W S, Luo M C, Zeng Y P, Li J M. Fast Epitaxy of 3C-SiC Grown on Si Substrate[J]. Chin. J. Semicond., 2007, 28(S1): 218.
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Fast Epitaxy of 3C-SiC Grown on Si Substrate
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Abstract
Fast epitaxy of 3C·SiC grown on substrate Si(100) and Si(111) was carried out by using the vertical low·pressure CVD system.SiC epilayers were characterized by Nomarski microscope and X·ray diffraction.The correlation between growth rate of 3C-SiC and the flow rate of precursors，mechanism of HCl in growth process，and crystallinity and orientation of 3C·SiC epilayers were investigated and discussed.-
Keywords:
- 3C·SiC,
- fast epitaxy,
- X-ray diffraction
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References
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Proportional views
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