| Citation: |
Ning Lina, Hu Xiaobo, Chen Xiufang, Li Juan, Wang Yingmin, Jiang Shouzhen, Xu Xiangang. Growth of Vanadium Doped Semi-Insulating 6H-SiC[J]. Journal of Semiconductors, 2007, 28(S1): 221-224.
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Ning L N, Hu X B, Chen X F, Li J, Wang Y M, Jiang S Z, Xu X G. Growth of Vanadium Doped Semi-Insulating 6H-SiC[J]. Chin. J. Semicond., 2007, 28(S1): 221.
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Growth of Vanadium Doped Semi-Insulating 6H-SiC
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Abstract
Semi-insulating SiC bulk crystals exhibiting resistivities up to 1.8 x 10^10 Ω·cm were obtained with vanadium doped sublimation method.Secondary ion mass spectrometry and glow discharge mass spectroscopy were used to determine the concentration of the impurities (such as B，Al，V，N) in the Source and crystals. The electrical properties of the crystals were assessed by I-V curves.It was found that the content of vanadium affects the quality of the as-grown crystals.-
Keywords:
- semi-insulating silicon carbide,
- sublimation method,
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References
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