| Citation: |
Liu Dafu, Wu Ligang, Xu Guosen, Zhang Lianmei, Jin Xiufang, Gong Haimei. Electrical Shock Effects on MCT Long-Wavelength PC Detectors[J]. Journal of Semiconductors, 2006, 27(S1): 314-317.
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Liu D F, Wu L G, Xu G S, Zhang L M, Jin X F, Gong H M. Electrical Shock Effects on MCT Long-Wavelength PC Detectors[J]. Chin. J. Semicond., 2006, 27(13): 314.
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Electrical Shock Effects on MCT Long-Wavelength PC Detectors
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Abstract
This study is concerned with electrical shock effect on performance of the n-type HgCdTe photoconductive detector with a composition of x≈0.2 in order to improve the reliability under this certain situation.An electrical shock was applied on long wavelength PC MCT detectors.Before and after the shock the resistance,response spectra,blackbody signal and minority carrier lifetime of detectors were measured at normal conditions.Experimental results show that short time shock has no obvious effects on detector performance and the composition have a tendency of decrease.When shock time increase the composition have a tendency of increase,and the detectors performance are decreasing,even wear out.Analysis proves the effect of electrical shock mainly is Joule heat,which is similar to laser irradiation effects-
Keywords:
- electrical shock,
- MCT,
- PC detectors,
- response spectra,
- minority carrier lifetime
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References
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Proportional views
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