| Citation: |
Liu Cheng, Wu Huizhen, Lao Yanfeng, Huang Zhanchao, Cao Meng. Application of Buried Tunnel Junction in Long-Wavelength VCSEL Structure[J]. Journal of Semiconductors, 2006, 27(S1): 309-313.
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Liu C, Wu H Z, Lao Y F, Huang Z C, Cao M. Application of Buried Tunnel Junction in Long-Wavelength VCSEL Structure[J]. Chin. J. Semicond., 2006, 27(13): 309.
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Application of Buried Tunnel Junction in Long-Wavelength VCSEL Structure
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Abstract
δ-doped p+-AlInAs-n+-InP and p+-InP-n+-InP tunnel junction structures are grown by gas-source molecular-beam epitaxy (GSMBE) on InP (100) substrates.Distribution of carriers and electrical properties are characterized by electrochemical C-V method and current-voltage characteristics.It is found that p+-AlInAs-n+-InP tunnel junction is superior to p+-InP-n+-InP tunnel junction.Then 1.3μm vertical-cavity surface-emitting laser (VCSEL) structure which employs p+-AlInAs-n+-InP buried tunnel junction and multiple quantum wells is grown on InP (100) substrates.The VCSEL structure demonstrates low threshold voltage.The gain peak position measured from electro-luminescence is at 1.29μm at room temperature.-
Keywords:
- tunnel junction,
- VCSEL,
- optoelectronic properties
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References
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Proportional views
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