Chin. J. Semicond. > 2006, Volume 27 > Issue S1 > 309-313
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Application of Buried Tunnel Junction in Long-Wavelength VCSEL Structure

Liu Cheng, Wu Huizhen, Lao Yanfeng, Huang Zhanchao and Cao Meng

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Abstract: δ-doped p+-AlInAs-n+-InP and p+-InP-n+-InP tunnel junction structures are grown by gas-source molecular-beam epitaxy (GSMBE) on InP (100) substrates.Distribution of carriers and electrical properties are characterized by electrochemical C-V method and current-voltage characteristics.It is found that p+-AlInAs-n+-InP tunnel junction is superior to p+-InP-n+-InP tunnel junction.Then 1.3μm vertical-cavity surface-emitting laser (VCSEL) structure which employs p+-AlInAs-n+-InP buried tunnel junction and multiple quantum wells is grown on InP (100) substrates.The VCSEL structure demonstrates low threshold voltage.The gain peak position measured from electro-luminescence is at 1.29μm at room temperature.

Key words: tunnel junction,  VCSEL,  optoelectronic properties

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    Received: 20 August 2015 Revised: Online: Published: 01 December 2006

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      Article Navigation >  Journal of Semiconductors  > 2006  >  27(S1): 309-313
      Liu Cheng, Wu Huizhen, Lao Yanfeng, Huang Zhanchao, Cao Meng. Application of Buried Tunnel Junction in Long-Wavelength VCSEL Structure[J]. Journal of Semiconductors, 2006, 27(S1): 309-313. ****Liu C, Wu H Z, Lao Y F, Huang Z C, Cao M. Application of Buried Tunnel Junction in Long-Wavelength VCSEL Structure[J]. Chin. J. Semicond., 2006, 27(13): 309.
      Citation:
      Liu Cheng, Wu Huizhen, Lao Yanfeng, Huang Zhanchao, Cao Meng. Application of Buried Tunnel Junction in Long-Wavelength VCSEL Structure[J]. Journal of Semiconductors, 2006, 27(S1): 309-313. ****
      Liu C, Wu H Z, Lao Y F, Huang Z C, Cao M. Application of Buried Tunnel Junction in Long-Wavelength VCSEL Structure[J]. Chin. J. Semicond., 2006, 27(13): 309.
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      Application of Buried Tunnel Junction in Long-Wavelength VCSEL Structure

      • State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystemand Information Technology, Chinese Academy of Sciences, Shanghai 200050, China

      • Graduate University of the Chinese Academy of Sciences, Beijing 100049, China

      • State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystemand Information Technology, Chinese Academy of Sciences, Shanghai 200050, China

      • State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystemand Information Technology, Chinese Academy of Sciences, Shanghai 200050, China

      • State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystemand Information Technology, Chinese Academy of Sciences, Shanghai 200050, China

      • State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystemand Information Technology, Chinese Academy of Sciences, Shanghai 200050, China

      • Received Date: 2015-08-20

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