Chin. J. Semicond. > 1998, Volume 19 > Issue 6 > 427-430
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激光CVD制备SnO_2薄膜的结构及其反应机理研究

戴国瑞 , 姜喜兰 , 南金 and 张玉书

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    Received: 18 August 2015 Revised: Online: Published: 01 June 1998

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      Article Navigation >  Journal of Semiconductors  > 1998  >  19(6): 427-430
      戴国瑞, 姜喜兰, 南金, 张玉书. 激光CVD制备SnO_2薄膜的结构及其反应机理研究[J]. 半导体学报(英文版), 1998, 19(6): 427-430.
      Citation:
      戴国瑞, 姜喜兰, 南金, 张玉书. 激光CVD制备SnO_2薄膜的结构及其反应机理研究[J]. 半导体学报(英文版), 1998, 19(6): 427-430.
      shu

      • Received Date: 2015-08-18

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