Chin. J. Semicond. > 2004, Volume 25 > Issue 4 > 394-399
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As~+/N_2~+组合离子注入Si的损伤退火及杂质浓度分布

韩宇 , 肖鸿飞 , 高雅君 and 马德录

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Key words: 组合离子注入, 双晶X射线衍射, 晶格应变, 退火, 杂质浓度

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    Received: 19 August 2015 Revised: Online: Published: 01 April 2004

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      Article Navigation >  Journal of Semiconductors  > 2004  >  25(4): 394-399
      韩宇, 肖鸿飞, 高雅君, 马德录. As~+/N_2~+组合离子注入Si的损伤退火及杂质浓度分布[J]. 半导体学报(英文版), 2004, 25(4): 394-399.
      Citation:
      韩宇, 肖鸿飞, 高雅君, 马德录. As~+/N_2~+组合离子注入Si的损伤退火及杂质浓度分布[J]. 半导体学报(英文版), 2004, 25(4): 394-399.
      shu

      • Received Date: 2015-08-19

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